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VOLUME -27 NUMBER 4
Publication Date: 04/1/2012
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April 2012 Issue
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Opto Diode Intros New High-Power IR LEDs
Newbury Park, CA — Opto Diode, a division of ITW and a member of the ITW Photonics Group, is introducing the third in a series of infrared (IR) LEDs, the OD-850L. Domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs), the new high optical output IR emitters have a medium emission angle for optimum coverage with excellent power density.
Similar to the recently introduced OD850W (wide angle emission) and the OD-850N (narrow angle emission) IR LEDs from the company, the new OD-850L is designed to replace the current OD-880L (medium emission angle) device. The new emitters provide greater output power (nearly 50 percent more) with less degradation and higher stability than the legacy devices. In addition, the new 850nm wavelength is also better matched to photo transistors and opto integrated circuits (ICs).
The new devices are especially suitable for industrial control tasks, and are hermetically-sealed in a standard TO-46 can that is designed with gold-plated surfaces and window caps carefully welded to the case, for added durability.
The LEDs can be stored or operated at temperatures ranging from -40 to +100°C. The convenient package is especially suitable for use in optical encoders and photoelectric controls. Peak emission wavelength is 850nm, the total power output ranges from a minimum 25mW, with a typical output at 35mW, and peak forward current at 300mA.
Contact: Opto Diode Corp. 750 Mitchell Dr. Newbury Park, CA 91320
805-499-0335 fax: 805-499-8108 E-mail: firstname.lastname@example.org Web:
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