Tuesday, July 26, 2016
VOLUME -27 NUMBER 2
Publication Date: 02/1/2012
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ARCHIVE >  February 2012 Issue >  Front Page News > 
Doping Graphene Sheets for Device and Interconnect

Atlanta, GA — Nanotechnology researchers at the Georgia Institute of Technology have conducted the first direct comparison of two fundamental techniques that could be used for chemically doping sheets of two-dimensional graphene for the fabrication of devices and interconnects.
 
Chemical doping is routinely used in conventional three-dimensional semiconductors to control the density of electron carriers that are essential to the operation of devices such as transistors. But graphene, a semi-metal available in sheets just one atom thick, has properties very different from traditional materials such as silicon — though researchers say doping will still be needed for ...

Rod Howell: EMS Biz Returning to USA

Mentor, OH — Where do SMTA Board Members and Presidents come from? Mentor, Ohio is one such place, where former SMTA President (a volunteer, non-paid position) Rod Howell steers his contract electronics manufacturing company Libra Industries on a straight path to long-term success. A privately held company, Libra has been in business for more than 30 years, and it was early during that time  ...

Commerce Dept Reports on America Competes

Gaithersburg, MD — On Jan. 6, 2012, the U.S. Department of Commerce (DOC) issued a new report highlighting key policy priorities to sustain and promote American innovation and economic competitiveness. The report, "The Competitiveness and Innovative Capacity of the United States," examines the historic role ...


 
 
Registration Open with New Exhibition Features at SEMICON Europa
GRENOBLE, FRANCE - Today SEMI announced registration opened for Europe’s largest electronics manufacturing exhibition, SEMICON Europa (25-26 October) in Grenoble. Featuring over 100 hours of technical sessions and presentations, SEMICON Europa includes semiconductor equipment and materials as well as additional topics, such as Imaging, Power Electronics, and Advanced Packaging.
RAYTHEON AWARDS LANSDALE SEMI FOR EXCELLENCE

Phoenix, AZ – For the third consecutive year, Lansdale Semiconductor, Inc. achieved a 4-star Supplier Excellence Award from Raytheon Integrated Defense Systems (IDS) business.  This prestigious annual award for supplier excellence program was instituted by Raytheon’s IDS to recognize top suppliers who have provided outstanding quality service and partnership in exceeding Raytheon’s requirements.  Award candidates are judged on strict military specifications criteria, including overall hi-rel quality, on-time delivery and demonstrated supplier company commitment to ongoing meeting and exceeding Raytheon’s highest military/defense industry’s standards.


Standards Industry Leaders Honored at SEMICON West 2016
SAN FRANCISCO, CA — SEMI honored four industry leaders for their outstanding accomplishments in developing Standards for the electronics and related industries. The SEMI Standards awards were announced at the SEMI International Standards reception held during SEMICON West 2016.

The 2016 SEMI International Standards Excellence Award, inspired by Karel Urbanek,is the most prestigious award in the SEMI International Standards Program. Yesterday, it was awarded to Terry Asakawa of Tokyo Electron. His leadership was critical in establishing the PV Automation Global Technical Committee and its subsequent transformation into the Automation Technology Global Technical Committee, as he envisioned how the SEMI Standards Program could effectively address simpler, flow-oriented manufacturing in industries outside of semiconductor manufacturing.

 
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