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Tuesday, October 25, 2016
VOLUME -26 NUMBER 7
Publication Date: 07/1/2011
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Special Features: SMT and Production
Product Preview: Semicon West
July 2011 Issue
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PowerTrench MOSFETs from Fairchild Semi
New MOSFETs increase rectifier power density.
San Jose, CA — PowerTrench
MOSFETs from Fairchild Semiconductor reportedly increase system efficiency and power density in synchronous rectification applications. This is especially useful for designers who need to improve system efficiency and minimize components in applications like high efficiency AC-DC converters. For them, being able to build an up-to-date power system with fast switching speeds, higher efficiency and power density is an important factor.
To help designers meet this challenge, Fairchild Semiconductor has expanded the PowerTrench
MOSFET family of 100 and 150V devices to include industrial-type packages, including the TO-220, D2PAK, TO247, I2PAK, TO220 Full Pack and D2PAK-7L.
Part of the mid-voltage power MOSFET portfolio, these devices are optimized power switches that combine a small gate charge (QG), a small reverse recovery charge (Qrr) and a soft reverse recovery body diode, which allows for fast switching for synchronous rectification in AC-DC power supplies.
These devices employ a shielded-gate structure that provides charge balance. By using this technology, the figure of merit (QG x RDS(ON)) is 66 percent lower than previous solutions, providing designers a high efficiency solution for applications including synchronous rectification, micro-solar inverters and offline UPS systems and PDU/BFU in telecom power distribution.
A low reverse recovery charge and the soft reverse recovery body diode reduces voltage spikes or oscillation in the system, eliminating the snubber circuit — or replacing a higher voltage rating MOSFET — enhancing efficiency and reducing the design bill of materials.
Contact: Fairchild Semiconductor Corp., 3030 Orchard Parkway, San Jose, CA 95134
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