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VOLUME -25 NUMBER 12
Publication Date: 12/1/2010
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December 2010 Issue
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AWR Intros Cree Process Design Kit
El Segundo, CA — AWR Corporation has released a new process design kit (PDK) that supports the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process.
The new Cree/AWR PDK enables MMIC designers to model Cree's GaN HEMT MMIC process within AWR's Microwave Office
software environment and enable the design of MMICs that offer more power bandwidth, higher efficiency, and a smaller footprint than can be achieved using conventional technologies such as GaAs.
The Cree GaN HEMT MMIC process features high power density (4-6 watts/mm) transistors, slot vias, and high reliability — up to 225°C operating channel temperatures — as well as scalable transistors. In addition, the Cree/AWR PDK leverages the company's Intelligent Net (iNet
) automated interconnect construction technology to automatically radius and fillet corners when connecting different parts together, thereby ensuring design-rule-check (DRC)-compliant layouts and eliminating the need for manual editing.
The kit is also set up for ready electromagnetic (EM) extraction through the company's EXTRACT technology, which can save designers' time by not having to manually edit schematics for EM results.
Contact: Applied Wave Research, Inc., 1960 E. Grand Avenue, Suite 430, El Segundo, CA 90245
310-726-3000 fax: 310-726-3005 Web:
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