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Thursday, December 8, 2016
VOLUME -25 NUMBER 9
Publication Date: 09/1/2010
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Electronic Mfg. Services
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Special Features: PCB and Assembly
Product Preview: AATE/IPC Midwest
September 2010 Issue
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Opto Diode Intros 30-Die IR LED Array
30-Die IR LED array.
Newbury Park, CA — Opto Diode Corporation has developed the first in a series of high-power LED arrays, the OD-850-30-030. The new 30-die near-infrared (NIR) LED array delivers more efficient operation and higher power with a narrow beam angle of 30°. The device has a peak wavelength of 850nm (min. 840nm and max. 865nm) and a total optical power output of 16Watts.
Especially suitable for night vision systems and skin therapy applications, the NIR light-emitting-diode array is a much more compact size compared to using discrete components — a critical factor in applications that have space limitations. The new array also provides a narrow beam angle which results in much higher intensities than could be achieved with a chip-on-a-board-type solution.
Thermal parameters for storage range from -40 to +125°C, and an operating temperature range from -20 to +100°C. The maximum junction temperature is +125°C with a thermal resistance, junction-to-case, of 0.8°C per watt.
Contact: Opto Diode Corp. 750 Mitchell Dr. Newbury Park, CA 91320
805-499-0335 fax: 805-499-8108 E-mail: firstname.lastname@example.org Web:
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