Save. Share. Connect.
Thursday, February 22, 2018
VOLUME -23 NUMBER 8
Publication Date: 08/1/2008
Front Page News
People in the News
Electronic Mfg. Services
Electronic Mfg. Products
Special Feature: Test and Measurement
Product Preview: ATExpo/IPC-MW
August 2008 Issue
Add Message Board
Richardson to Distribute HVVi's Silicon Power Transistors
La Fox, IL — Richardson Electronics, Ltd. (NASDAQ: RELL) has signed a global distribution agreement with HVVi Semiconductors, Inc., of Phoenix, AZ, to distribute its RF power transistors, based on HVVi's innovative, new HVVFET architecture. HVVi recently announced what it describes as the first major advance in silicon RF power transistor design in more than 15 years.
Based on the world's first High Voltage Vertical Field Effect Transistor (HVVFET
), this new architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications with improved performance, reducing overall part count and enhancing cost efficiencies.
HVVi recently introduced its first three products based on the HVVFET architecture: the HVV1011-300, HVV1214-075 and HVV1214-025. Targeted at high power, pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground-based radar; the three new devices leverage the inherent benefits of the HVVFET process to deliver high output power and high gain in an extremely compact package. All three transistors are designed to operate at 48V.
Contact: Richardson Electronics, 40 W 267 Keslinger Road, P.O. Box 393, LaFox, IL 60147-0393
800-737-6937 or 630-208-3637 fax: 630-208-2550 Web:
© 2015 USTECH. All Rights Reserved. |
Contact Us: 610-783-6100 | firstname.lastname@example.org
powered by GIM