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Wednesday, June 28, 2017
VOLUME -23 NUMBER 6
Publication Date: 06/1/2008
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June 2008 Issue
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Schott Lithotec Closer to Absorbance Goals
Jena, Germany — Schott Lithotec reports significant progress towards meeting its absorption targets for lutetium aluminum garnet (LuAG), which the lithography industry plans to use as lens material for a new generation of high-index immersion lithography tools. This progress moves Schott Lithotec one step closer to meeting its goal of commercially producing 160mm diameter LuAG for the lithography industry by the fourth quarter of 2009.
Since the Keystone Immersion Symposium in October 2007, Schott Lithotec has moved closer to reaching its LuAG absorption value goals. For example, the development factor to meet the target value for absorption has been reduced from 22 to 10. This progress moves Schott Lithotec much closer to its final absorption target. New high-index immersion lithography will allow the microchip industry to move to 193nm optical lithography imaging structures that support the production of chips with 32 nm structural widths without double exposure/patterning. Reducing the chips' structural width to 32 nm will allow the microchip industry to mass produce smaller, faster and more powerful semiconductors for computers, digital cameras, and other electronic devices and applications.
Contact: Schott North America, Inc., 555 Taxter Road Elmsford, NY 10523
914-831-2200 fax: 914-831-2201 Web:
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