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RIT & AmberWave Collaborate on New Semicon Research
Salem, NH — AmberWave Systems, along with Rochester Institute of Technology (RIT), have been awarded a three-year research grant from the National Science Foundation (NSF). The research grant will allow the two organizations to explore the integration of compound semiconductor devices on silicon using a technique called Aspect Ratio Trapping (ART), an initial development by AmberWave Systems. ART is a technology that may open the door to faster, more powerful chips, which could find their way into a wide range of applications, from silicon-based photonics to improved photovoltaic cells. In the case of silicon photonics, ART could allow manufacturers to combine different materials onto a silicon base, forming chips that use light pulses to carry data, similar to fiber optic technology. The result is increased speed of data transmission — much faster than allowed by today's systems.

The III-V electronic materials, such as those being investigated with the help of the NSF grant, have been used for years in niche markets that require extremely high-speed performance, optical properties, and/or RF properties. Yet, they have seen little market penetration for more mainstream applications due to high costs and the difficulty of integrating with conventional, inexpensive silicon electronics. However, ART would allow manufacturers to capitalize on their investments in current manufacturing technologies, considerably reducing costs, and allowing the devices to be included in a wide range of products at consumer-friendly prices.

The principal investigators working on this collaboration are Dr. Santosh Kurinec and Dr. Sean Rommel of RIT's Department of Microelectronic Engineering.

For more information: http://www.amberwave.com or www.rit.com  

 
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