||Las Vegas, NV — Both 2.5D and 3D IC integration offer significant potential for reducing the form factor of microelectronic devices targeting next-generation communication devices, while improving their electrical and thermal performance. Cost-effective temporary bonding solutions are a key enabler for this advanced technology by bonding today's ultra-thin active device wafers to thicker carrier wafers for subsequent thinning and TSV formation.
Temporary bonding solutions must deliver a uniformly thick adhesive coat, and be able to withstand the mechanical, thermal and chemical processes of TSV fabrication. In addition, they must subsequently debond the active and carrier wafers without damaging the high-value fabricated devices.
Through their collaboration, Dow Corning and SUSS MicroTec were able to develop a temporary bonding solution that met all of these application requirements. Comprising an adhesive and release layer, Dow Corning's silicon-based material is optimized for simple processing with a bi-layer spin coating and bonding process. Combined with SUSS MicroTec equipment, the total solution offers the benefits of simple bonding using standard manufacturing methods. The collaborators report a solution exhibiting a total thickness variation of less than 2µm for spin-coated films on either 200 or 300mm wafers. The bonding material exhibits strong chemical stability when exposed to phosphoric acid, nitric acid, organic solvents and other chemicals familiar to TSV fabrication. In addition, the bonding solution and paired wafers showed good thermal stability when exposed to the 300°C temperatures common to the TSV process.
Contact: The Dow Chemical Company, 2030 Dow Center, Midland, MI 48674 989-636-1000 Web: http://www.dow.com