Goleta, CA — Transphorm Inc. has introduced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing the world's first JEDEC-qualified 600V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.
|New class of power semiconductor. |
Based on the company's patented, high-performance EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs.
The TO-220-packaged GaN transistor has low on-state resistance RDS(on) of 150 milliohms, low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability — all of which result in more compact, lower cost systems. Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6A and 4A operating currents, respectively, with a forward voltage (Vf) of 1.3V. In addition, three application kits — PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) — are available for rapidly benchmarking the in-circuit performance of the company's products.
Contact: Transphorm, Inc., 115 Castilian Drive, Goleta, CA 93117 805-456-1300 E-mail: firstname.lastname@example.org Web: http://www.transphormusa.com.