Save. Share. Connect.
Tuesday, August 30, 2016
VOLUME - NUMBER
Daily News Archive
Front Page Articles
People in the News
Electronic Mfg. Services
Electronic Mfg. Products
HOME / CURRENT ISSUE
Daily News Archive
Add Message Board
RFaxis Second Generation Pure CMOS Single-Chip/Single-Die RFeICs Outperform GaAs/SiGe Based RF Front-End Solutions
IRVINE, CA -
a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless connectivity and cellular mobility markets, today announced it will start volume production of its second-generation, pure CMOS-based RFeICs in Q4 2012. The new solutions will serve rapidly growing markets including smartphone and tablets, WLAN 11a/n/ac, ZigBee, wireless audio, smart energy and home automation.
Following the successful deployment of its
, the world's first single-chip/single-die, RF front-end ICs (RFeIC) in pure CMOS for ZigBee/ISM and 802.11b/g/n applications, RFaxis is now entering into full-scale manufacturing and shipment of seven additional RFeICs. This will significantly broaden RFaxis' product offerings to the wireless/RF community.
deliver +18dBm output power with 3% EVM for 64QAM/OFDM in the 5GHz 802.11a/n/ac frequency band, including all losses of the antenna switch and input/output impedance matching network. Combined with high gain (33dB), high-efficiency (170mA at +17dBm in Low-Current Mode), extremely low EVM floor (<1.5%), excellent thermal stability, and multiple mode controls with simple CMOS logic, the RFX5000 and RFX5000B outperform all 5GHz front-end solutions on the market today from any existing technology, including Gallium Arsenide (GaAs) or Silicon Germanium (SiGe). Additionally, the RFX5000 and RFX5000B solutions are pin-to-pin compatible with existing incumbent 5GHz technologies.
and RFX8421 are designed and optimized for dual-mode Wi-Fi/Bluetooth applications that are now standard features in mainstream smartphones. Housed in ultra-compact 2.5x2.5x0.45mm QFN package, and pin-compatible with multiple GaAs-based front-end modules (FEM) on the market, the RFX8420 and RFX8421 also deliver state-of-the-art RF performance, including excellent EVM power and efficiency. Additionally, the RFeICs have 0.8dB in total insertion loss for the SP3T switch with all DC-blocking capacitors integrated on-chip.
RFaxis continues to expand its 2.4GHz and Sub-GHz RFeIC portfolio for ZigBee, smart energy/smart home, wireless sensor network and generic ISM-band applications. The
is an ultra-broadband half-watt RFeIC which operates from 780 to 960MHz. The new
and RFX2410 add antenna diversity capability to the company's extremely popular RFX2401C, without any compromise in output power/efficiency or increase in package size.
"RFaxis has broken all of the technical barriers that have prevented bulk CMOS to beat the performance of incumbent technologies, such as GaAs and SiGe," stated Mike Neshat, chairman and CEO of RFaxis. "We are not only starting full-scale deployment and production of these seven new RFeICs - ranging from sub-GHz ZigBee to 5GHz 11n/ac MIMO - but will also be sampling our RFX8825 RFeIC to support the upcoming migration to dual-band/dual-mode, Wi-Fi designs in smartphones and tablets, as well as our RFX240 high-power linear power amplifier to capture the Wi-Fi AP/router and outdoor hotspot markets. By offering the best-in-class performance, lowest cost, highest level of integration, and pin-to-pin compatible solutions with our competitors, RFaxis is going to 'turn off the GaAs' and bring pure CMOS technology center stage for the RF front-end market. Our goal is to be the world's preferred RF front-end solution provider and displace all competing solutions in 2013."
Contact: Yongxi Qian, RFaxis, Inc.,
© 2015 USTECH. All Rights Reserved. |
Contact Us: 610-783-6100 | email@example.com
powered by GIM