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Dow Corning to Participate in ECSCRM 2012, Will Highlight 150 mm SiC, GaN on Silicon and High-Temperature Packaging Technologies
MIDLAND, MI –  
Dow Corning Corp., a global leader in advanced materials for the development, packaging, protection and assembly of next-generation power electronics, will participate in ECSCRM 2012 (display stand 16), St. Petersburg, Russia, from Sept. 2 – 6. At the conference, the company will highlight three of its industry-leading power electronics technologies for a broad and growing range of demanding, high-performance applications. These include high-crystal quality 150-mm Silicon Carbide (SiC), Gallium Nitride (GaN) on silicon and high-temperature packaging. Top-level company management and technical experts will be on-hand to discuss these technologies with customers and the press.

 
 
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